Sergey A. Shevchenko

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We discuss a theoretical and experimental study of influence of various physical effects affecting the switching process of a 4H-SiC drift step recovery diode (DSRD). Effects of high doping and high injection levels are accounted. Incomplete ionization of dopants is considered as well. Based on simulation results quantitative estimation of charge losses(More)
The results of the design and examination of the low-voltage 4H-S&#x0130;C drift step recovery diode (DSRD) are presented. The study was carried out by simulation in Synopsys Sentaurus TCAD in two-dimensional approach. It is shown that for a low-voltage DSRD an optimization of the doping profile in base region and p<sup>&#x002B;</sup>-emitter thickening is(More)
We discuss the results of the design and examination of high-voltage superfast opening switches - the drift step recovery diodes (DSRD) based on silicon carbide. The fabricated diodes have p+-p-n+ structure with relatively thick low-doped base region, which allows switching voltage of 1.8 kV in less than 500 ps. With 4H-SiC DSRD operating as an opening(More)
By examining 201 patents by currently available radiation (X-ray, ultrasound, and radionuclide) and pathomorphological techniques, the authors consider that benign diseases (nonspecific mastitis, focal fibrosclerosis, pathological secretion appearing as ductal cysts or papillomas, fibroadenomas, gynecomastia, oleogranulomas) and different histological forms(More)
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