Sergey A. Chevtchenko

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In this work we present a technology of slanted sidewall gate fabrication using ICP etching of the SiNx passivation layer with a thermally reflowed ZEP 520A electron beam resist as etch mask. The influences of reflow time and temperature on structure size and sidewall angle are studied. Furthermore, the dependencies of SiNx etch rate, RF bias level, and(More)
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