Sergei V. Novikov

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Transmission electron microscopy of indium gallium nitride nanorods grown by molecular beam epitaxy. General rights This document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: Explore Bristol Research is a digital archive and the intention is that(More)
Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of(More)
Through nonequilibrium low-temperature molecular beam epitaxy, we have grown GaN 1−x Bi x alloys on sapphire substrates with x up to 0.11. The GaN 1−x Bi x alloys are found to be amorphous with GaN crystals distributed throughout the film. A dramatic reduction in the optical band gap from 3.4 eV in GaN to as low as 1.2 eV for x ϳ 0.11 was qualitatively(More)
We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the(More)
The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically(More)
The following statement has been omitted from the ' Additional Information' section of the HTML version of this Article: " Data Availability: The images and spectra on which this paper is based may be publicly accessed and are stored at 10.17639/nott.35 ". This work is licensed under a Creative Commons Attribution 4.0 International License. The images or(More)
Thin films of GaNBi alloys with up to 12.5 at.% Bi were grown on sapphire using low-temperature molecular beam epitaxy. The low growth temperature and incorporation of Bi resulted in a morphology of nanocrystallites embedded in an amorphous matrix. The composition and optical absorption shift were found to depend strongly on the III:V ratio controlled by(More)
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