Seok Man Hong

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The improved resistive switching (RS) performance characteristics of nickel nitride (NiN) films-based crossbar array (CBA) memory resistors-such as reduction in the operating voltages, reset current and current/voltage variations; no initial forming process; and set/reset speeds--are demonstrated using nanopyramid-patterned (NPP) platinum-bottom electrodes.(More)
In this letter, the effect of the work function difference between various top electrodes (TE-Ni, W, Ti, and Al) and the Pt bottom electrode, &#x0394;&#x03A6;<sub>M</sub>, on the resistive switching (RS) of SiN thin films was investigated. The cells with W and Ti TEs showed stable RS, but others failed to show RS. In particular, the Ti TE exhibited low(More)
The size-dependent resistive switching (RS) properties of the active region in a 1 x 1 NiN-based crossbar array (CBA) resistive random access memory (ReRAM) are investigated in the range of 2 x 2 μm2 to 8 x 8 μm2. In the forming test, the forming voltage is reduced by decreasing the cell size of the active region. Compared to the 8 x 8 μm2 CBA ReRAM, the(More)
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