Seigi Mizuno

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Epitaxial chemical vapor deposition (CVD) growth of uniform single-layer graphene is demonstrated over Co film crystallized on c-plane sapphire. The single crystalline Co film is realized on the sapphire substrate by optimized high-temperature sputtering and successive H(2) annealing. This crystalline Co film enables the formation of uniform single-layer(More)
For electronic applications, synthesis of large-area, single-layer graphene with high crystallinity is required. One of the most promising and widely employed methods is chemical vapor deposition (CVD) using Cu foil/film as the catalyst. However, the CVD graphene is generally polycrystalline and contains a significant amount of domain boundaries that limit(More)
An electron beam (EB) irradiation effect on the Si(001)-c(4 x 2) surface was investigated by using low-energy electron diffraction. Quarter-order spots become dim and streaky by EB irradiation below approximately 40 K, indicating a disordering in the c(4 x 2) arrangement of buckled dimers. A quantitative analysis of decreasing rates of the spot intensity at(More)
We demonstrate a novel epitaxial CVD method to grow high quality single-layer graphene using a thin Cu(111) film instead of conventional Cu foil. The atomically smooth Cu(111) catalyst produced the graphene with less defects and controlled orientation of the hexagonal lattice. The CVD graphene showed the carrier mobility as high as 20,000 cm<sup>2</sup>/Vs(More)
Hexagonal boron nitride (h-BN), an atomically thin insulating material, shows a large band gap, mechanical flexibility, and optical transparency. It can be stacked with other two-dimensional (2D) materials through van der Waals interactions to form layered heterostructures. These properties promise its application as an insulating layer of novel 2D(More)
Kazuyuki Sakamoto, Johan Eriksson, Seigi Mizuno, Nobuo Ueno, Hiroshi Tochihara and Roger Uhrberg, Core-level photoemission study of thallium adsorbed on a Si(111)-(7×7) surface: Valence state of thallium and the charge state of surface Si atoms, 2006, Physical Review B. Condensed Matter and Materials Physics, (74), 7, 075335.(More)
Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge(More)
The phase evolution of Si on Ni (111) was studied by LEED and AES. A new phase of Si on Ni (111) was found along with the previously reported (&#x221A;3 &#x00D7; &#x221A;3)R 30&#x00B0; phase. The surface structure of (&#x221A;3 &#x00D7; &#x221A;3)R 30&#x00B0; phase had determined, with chemical composition of Ni<sub>2</sub>Si, by using low-energy electron(More)
On page 3956, A. Yurtsever and co-workers demonstrate a novel method to obtain a p-doped graphene layer on SiC (0001) substrate by Pb atom intercalation. The Pb intercalated structure is found to be stable in ambient conditions and at high temperatures up to 1250 °C. It is shown that electronic properties of graphene can be greatly tuned by Pb intercalation(More)
Silicene, the silicon analogy of graphene, has attracted tremendous attention. Also the formation of alloys that exist only in a confined region near the surface of materials has important technological implications. In this work, we study the structural transition for silicon adsorption on Ag(111) to form a highly ordered 2-D structure and to observe the(More)