Sebastien Chartier

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We present two amplifiers using the SiGe HBT technology, operating at 24 GHz and 36 GHz, respectively. The first amplifier was designed to operate in the 24 GHz ISM band, especially for traffic and automotive applications. In the next step, this amplifier was improved to reach higher frequencies. Both amplifiers show a gain higher than 20 dB, a good(More)
The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-mum SiGe HBT process is presented. A high-resistivity silicon substrate (1000 Omega ldr cm) is used for the implemented circuit to improve the efficiency of the integrated antenna. Crosstalk between the antenna and spiral inductors is analyzed and(More)
In this paper, the authors present a fully integrated VCO with 32% tuning range centered at 38.9 GHz. The VCO was designed using a commercially available, inexpensive 0.8 μm Si/SiGe HBT technology with fT and fmax of 80 and 90 GHz, respectively. It consumes 195 mW DC power and provides an output power of more than 5 dBm. A phase noise of -93 dBc/Hz at 1 MHz(More)
The authors present three amplifiers, operating at 36, 40 and 50GHz implemented in a low-cost 0.8mum Si/SiGe HBT technology which features an f<sup>T</sup> and f<sup>MAX</sup>of 80GHz. Each amplifier shows a high gain, a high isolation and a good linearity. The high performance is obtained by using appropriate design techniques such as cascode topology, DC(More)
A fully integrated fully differential low-noise amplifier for 79 GHz short range radar applications using a highspeed SiGe:C BiCMOS technology is presented. The integrated circuit uses thin-film microstrip lines and exhibits compact design (530 times 690 mum<sup>2</sup>), low power consumption (90 mW at 3 V supply voltage), high gain (13 dB gain at 81 GHz),(More)
In this paper, we present a fully integrated differential, compact frequency divider with a divide ratio of 32. The circuit utilizes a Si/SiGe 0.25 mum BiCMOS technology and operates beyond 75 GHz. The divider has a die area of 655 mum times 475 mum and consumes 202 mA at 5 V supply voltage. The frequency divider consists of the first stage of a dynamic(More)
We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mum SiGe heterojunction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the FCC-allocated bandwidth for ultra-wideband (UWB) systems. The circuit delivers 19.6 dB peak gain with gain variations of 1.3 dB within the(More)
A Si/SiGe bipolar dynamic frequency divider designed for 77GHz/79GHz automotive radar is presented, which uses a transimpedance amplifier topology to improve sensitivity and operational bandwidth. Capable of operation for input frequencies from 22 GHz up to 93 GHz, the divider consumes only 35 mA at 5 V supply voltage and has a very compact die area of 295(More)
Following the design trend of integrated receivers, the direct downconversion (DD) principle is investigated from radar system-level perspective, but with a strong focus on the analog mechanisms. While most modern radar receivers favor a digital downconversion to avoid I/Q mismatches, they demand discrete realization and larger form factors. Recent advances(More)