Sebastian Steiger

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The development of a new nanoelectronics modeling tool, NEMO5, is reported. The tool computes strain, phonon spectra, electronic band structure, charge density, charge current, and other properties of nanoelectronic devices. The modular layout enables a mix and match of physical models with different length scales and varying numerical complexity. NEMO5(More)
An enhanced valence force field model for zinc-blende crystals is developed to provide a unified description of the isothermal static and dynamical lattice properties of gallium arsenide. The expression for the lattice energy includes a second-nearest-neighbor coplanar interaction term, the Coulomb interaction between partially charged ions, and(More)
Nonequilibrium Green’s Functions (NEGF) are employed to model carrier transport and luminescence in a singlequantum-well light-emitting diode (LED). The sound theoretical formalism allows for a consistent description of coherence loss as well as fundamental scattering mechanisms and reveals details about physical phenomena such as the quantum-confined Stark(More)
Novel device concepts and better channel materials than Si are required to improve the performance of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). The exploration of III-V semiconductors is mainly driven by the extremely high electron mobility of the materials. Recently, several researches have demonstrated that III-V high(More)
In the last few years, evolutionary computing (EC) approaches have been successfully used for many real world optimization applications in scientific and engineering areas. One of these areas is computational nanoscience. Semi-empirical models with physics-based symmetries and properties can be developed by using EC to reproduce theoretically the(More)
  • Diss Eth, No, +11 authors Vii Zusammenfassung
  • 1979
Topic of this thesis is the development and extension of three-dimensional quantum ballistic transport simulators for the modeling of nanowire and planar field effect transistors (FETs) at the nanometer scale, as well as the investigation of band structure effects by various atomistic methods in order to improve the effective mass approximation (EMA) being(More)
Introduction Modeling and simulation take an important role in the exploration and design optimization of novel devices. As the downscaling of electronic devices continues, the description of interfaces, randomness, and disorder on an atomistic level gains importance and continuum descriptions lose their validity. Often a full-band description of the(More)
III-V FETs are in development for both THz and VLSI applications. In VLSI, high drive currents are sought at low gate drive voltages, while in THz circuits, high cutoff frequencies are required. In both cases, source and drain access resistivities must be decreased, and transconductance and drain current per unit gate width must be increased by reducing the(More)
This article summarizes the capabilities of the optoelectronic simulation framework tdkp/AQUA aimed at the description of electroluminescence in semiconductor nanostructures such as light-emitting diodes (LEDs). tdkp is a standalone finite-element software able to accurately calculate strain, built-in fields due to spontaneous and piezoelectric(More)