• Citations Per Year
Learn More
The low volumetric energy density of reduced graphene oxide (rGO)-based electrodes limits its application in commercial electrochemical energy storage devices that require high-performance energy storage capacities in small volumes. The volumetric energy density of rGO-based electrode materials is very low due to their low packing density. A supercapacitor(More)
Highly luminescent graphene oxide (GO)-phosphor hybrid thin films with a maximum quantum yield of 9.6% were synthesized via a simple chemical method. An intense luminescence emission peak at 537 nm and a broad emission peak at 400 nm were observed from the GO-phosphor hybrid films. The maximum quantum yield of the emissions from the hybrid films was found(More)
The stability of hydrogenated indium-gallium-zincoxide (IGZO) thin-film transistors (TFTs) was investigated. Hydrogenation of the IGZO TFTs was carried out by high-pressure hydrogen annealing. The IGZO TFTs annealed under nitrogen (N<sub>2</sub>) ambiance were also fabricated for the comparative studies. The devices were kept in the air ambiance, and their(More)
Graphene oxide (GO)-phosphor hybrid nanoscrolls were synthesized using a simple chemical method. The GO-phosphor ratio was varied to find the optimum ratio for enhanced optical characteristics of the hybrid. A scanning electron microscope analysis revealed that synthesized GO scrolls achieved a length of over 20 μm with interior cavities. The GO-phosphor(More)
Hydrogenation of thin-film indium-gallium-zincoxide (IGZO) is carried out by applying a high-pressure hydrogen annealing (HPHA) process under 5-atm pressure at different temperatures of 260&#x00B0;C, 270&#x00B0;C, and 280&#x00B0;C. The HPHA effectively increases the carrier concentration and the Hall mobility up to ~ 10<sup>19</sup> cm<sup>-3</sup> and ~(More)
A resistive random access memory (RRAM) device with self-rectifying I-V characteristics was fabricated by inserting a silicon nitride (Si3N4) layer between the bottom electrode and solution-processed active material of an iron oxide-graphene oxide (FeOx-GO) hybrid. The fabricated Au/Ni/FeOx-GO/Si3N4/n+-Si memory device exhibited an excellent resistive(More)
  • 1