Scott A. Chambers

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In most cases authors are permitted to post their version of the article (e.g. in Word or Tex form) to their personal website or institutional repository. Authors requiring further information regarding Elsevier's archiving and manuscript policies are encouraged to visit: a b s t r a c t The question of stability against diffusional mixing at the(More)
Many materials have been theoretically predicted to be half-metallic, and hence suitable for use as pure spin sources in spintronic devices. Yet to date, remarkably few of these predictions have been experimentally verified. We have used spin polarized photoelectron spectroscopy to study one candidate half-metallic system, Fe(3)O(4). Such experiments are(More)
" Predictive control over charge density in the two-dimensional electron gas at the polar/non-polar NdTiO3/SrTiO3 interface " , Phys. " Terahertz conductivity of ultra-high electron concentration 2DEGs in NdTiO3/SrTiO3 heterostructures " APL Mater. 4, 076107 (2016). New linear defect in NdTiO3 and new possibilities in complex oxide perovskites " Nano Lett.(More)
Epitaxial thin films of Cr 2−x Ti x O 3 were deposited by oxygen-plasma-assisted molecular beam epitaxy for 0.04 x 0.26. Ti valence is verified by both x-ray photoelectron spectroscopy (XPS) and Ti K-edge x-ray absorption near-edge spectroscopy (XANES) to be Ti 4+. Substitution of Ti for Cr in the corundum lattice is verified by fitting the Ti K-edge(More)
In transition-metal oxides, the ability to control which atomic orbitals are occupied by electrons could be used to develop materials with new functionalities. Oxides containing transition metals have many fascinating properties, such as superconductivity, ferroelec-tricity, and forms of magnetism that are linked to the crystal structure. These properties(More)
however, only a few oxides accommodating high electron density confined to low dimensions. [12,17–21] Filling this materials gap would provide qualitatively new opportunities in the field of nanoscale oxide electronic devices including novel plasmonic and high charge-gain devices. NdTiO 3 (NTO) and SrTiO 3 (STO) are classified as a Mott and a band(More)
Metals deposited in vacuum on metal oxides such as alumina normally grow as three-dimensional clusters because of weak adatom-substrate interactions. This tendency hinders our ability to form interfaces of ultrathin, laminar metal films on oxides for use in microelectronics and other technologies where nanostructural control is desired. We present(More)
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