Saurabh Mookerjea

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Vertical In<inf>0.53</inf>Ga<inf>0.47</inf>As tunnel field effect transistors (TFETs) with 100nm channel length and high-k/metal gate stack are demonstrated with high I<inf>on</inf>/I<inf>off</inf>(More)
We report on the experimental temperature-dependent characteristics of vertical In0.53Ga0.47As tunnel field-effect transistors (TFETs) at low drain bias to provide key insight into its device(More)