Saptarshi Mandal

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This report discusses the electrical characteristics of two-terminal synaptic memory devices capable of demonstrating an analog change in conductance in response to the varying amplitude and pulse-width of the applied signal. The devices are based on Mn doped HfO₂ material. The mechanism behind reconfiguration was studied and a unified model is presented to(More)
We present certain exact analytical results for dynamical spin correlation functions in the Kitaev Model. It is the first result of its kind in nontrivial quantum spin models. The result is also novel: in spite of the presence of gapless propagating Majorana fermion excitations, dynamical two spin correlation functions are identically zero beyond nearest(More)
This paper discusses the impact of the bidirectional diode parameters on the read failures in 1ReRAM 1Diode (1D1R) crossbar array memory architectures. Our studies show that while a diode is integral for the successful read operation, the maximum achievable crossbar memory capacity is a strong function of the reverse saturation current of the diode. An(More)
BACKGROUND In this study, the measurement of job stress of electric overhead traveling crane operators and quantification of the effects of operator and workplace characteristics on job stress were assessed. METHODS Job stress was measured on five subscales: employee empowerment, role overload, role ambiguity, rule violation, and job hazard. The(More)
Design concepts and algorithms were developed to address the eye tracking analysis issues that arise when (1) participants interrogate dynamic multielement objects that can overlap on the display and (2) visual angle error of the eye trackers is incapable of providing exact eye fixation coordinates. These issues were addressed by (1) developing dynamic(More)
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