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We report on a 2085 nm holmium-doped silica fiber laser passively mode-locked by semiconductor saturable absorber mirror and carbon nanotube absorber. The laser, pumped by a 1.16 μm semiconductor disk laser, produces 890 femtosecond pulses with the average power of 46 mW and the repetition rate of 15.7 MHz.
The proportions of six immunoglobulin isotypes (IgA, IgM, IgG1, IgG2, IgG3, and IgG4) in rubella antibody responses were quantified in 40 serum samples (20 patients). The first sample from each patient was taken during the first days of the illness, and the second sample 10 +/- 1 days later. A tenfold average increase in antibody concentration was observed(More)
A 1.6µm mode-locked Raman fiber laser pumped by a 1480nm semiconductor disk laser is demonstrated. Watt-level core pumping of the single-mode fiber Raman lasers with low-noise disk lasers together with semiconductor saturable absorber mirror mode locking represents a highly practical solution for short-pulse operation.
A high-power dual-wavelength AlGaInAs / GaAs laser operating in a vertical external-cavity surface emitting geometry, grown by molecular beam epitaxy, is reported. The active regions of the laser are separated by an optical long-wave-pass filter to prevent absorption of short-wavelength radiation in the long-wavelength gain area. The maximum output power(More)
Monoclonal mouse antibodies to human IgG myeloma proteins were produced and characterized by determining their binding to a series of different purified myeloma proteins. Two types of immunization schedules were used. When the same myeloma protein was used for priming and boosting the mouse, all determinants of the molecule were effectively immunogenic. Of(More)
A picosecond GaInP/AlGaInP/GaAs vertical external-cavity surface-emitting laser (VECSEL) at 675 nm is reported. The laser is mode-locked with a GaInP/AlGaInP/GaAs saturable absorber mirror and emitted ~5.1 ps pulses at a 973 MHz repetition rate and an average power of 45 mW. To our knowledge, this is the first demonstration of a passively mode-locked VECSEL(More)
The paper presents simulation results for laterally-corrugated ridge-waveguide distributed-feedback (DFB) semiconductor lasers emitting at 980 nm, along with measured results. The effect of the corrugation on the laser output characteristics is discussed. Almost 50 dB side-mode suppression ratio was achieved for the laterally-corrugated ridge waveguide DFB(More)
We demonstrate 1.5 W of output power at the wavelength of 750 nm by intracavity frequency doubling a wafer-fused semiconductor disk laser diode-pumped at 980 nm. An optical-to-optical efficiency of 8.3% was achieved using a bismuth borate crystal. The wavelength of the doubled emission could be tuned from 720 to 764 nm with an intracavity birefringent(More)
A high-efficiency optically pumped vertical-external-cavity surface-emitting laser emitting 20 W at a wavelength around 588 nm is demonstrated. The semiconductor gain chip emitted at a fundamental wavelength around 1170-1180 nm and the laser employed a V-shaped cavity. The yellow spectral range was achieved by intra-cavity frequency doubling using a LBO(More)
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