Sanghyun Ju

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The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with(More)
Optically transparent, mechanically flexible displays are attractive for next-generation visual technologies and portable electronics. In principle, organic light-emitting diodes (OLEDs) satisfy key requirements for this application-transparency, lightweight, flexibility, and low-temperature fabrication. However, to realize transparent, flexible(More)
Transistors based on various types of nonsilicon nanowires have shown great potential for a variety of applications, especially for those that require transparency and low-temperature substrates. However, critical requirements for circuit functionality, such as saturated source-drain current and matched threshold voltages of individual nanowire transistors(More)
performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment" (2007). Abstract High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device performance metrics.(More)
Perfect metamaterial absorber (PMA) can intercept electromagnetic wave harmful for body in Wi-Fi, cell phones and home appliances that we are daily using and provide stealth function that military fighter, tank and warship can avoid radar detection. We reported new concept of water droplet-based PMA absorbing perfectly electromagnetic wave with water, an(More)
Semiconductor nanowires have achieved great attention for integration in next-generation electronics. However, for nanowires with diameters comparable to the Debye length, which would generally be required for one-dimensional operation, surface states degrade the device performance and increase the low-frequency noise. In this study, single In(2)O(3)(More)
type field-effect transistors using multiple Mg-doped ZnO nanorods" (2007). Abstract—Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO 2 gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold(More)
Selective filtration of gas, water, and liquid or gaseous oil is essential to prevent possible environmental pollution and machine/facility malfunction in oil-based industries. Novel materials and structures able to selectively and efficiently filter liquid and vapor in various types of solutions are therefore in continuous demand. Here, we investigate(More)
The change in the atomic nitrogen concentration on a semiconducting nanowire's surface and the consequent changes in the electrical characteristics of a nanowire transistor were investigated by exposing In(2)O(3) nanowires to nitrogen (N(2)) plasma. After plasma was applied at N(2) flow rates of 20, 40, and 70 sccm with a fixed source power of 50 W, the(More)
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