Sanghyun Ju

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The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with(More)
Transistors based on various types of nonsilicon nanowires have shown great potential for a variety of applications, especially for those that require transparency and low-temperature substrates. However, critical requirements for circuit functionality, such as saturated source-drain current and matched threshold voltages of individual nanowire transistors(More)
Optically transparent, mechanically flexible displays are attractive for next-generation visual technologies and portable electronics. In principle, organic light-emitting diodes (OLEDs) satisfy key requirements for this application-transparency, lightweight, flexibility, and low-temperature fabrication. However, to realize transparent, flexible(More)
Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (I(on)) in the microampere(More)
Semiconductor nanowires have achieved great attention for integration in next-generation electronics. However, for nanowires with diameters comparable to the Debye length, which would generally be required for one-dimensional operation, surface states degrade the device performance and increase the low-frequency noise. In this study, single In(2)O(3)(More)
performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment" (2007). Abstract High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device performance metrics.(More)
The development of nanowire transistors enabled by appropriate dielectrics is of great interest for flexible electronic and display applications. In this study, nanowire field-effect transistors (NW-FETs) composed of individual ZnO nanowires are fabricated using a self-assembled superlattice (SAS) as the gate insulator. The 15-nm SAS film used in this study(More)
In(2)O(3) nanowire transistors are fabricated with and without oxygen plasma exposure of various regions of the nanowire. In two-terminal devices, exposure of the channel region results in an increased conductance of the channel region. For In(2)O(3) nanowire transistors in which the source/drain regions are exposed to oxygen plasma, the mobility, on-off(More)
type field-effect transistors using multiple Mg-doped ZnO nanorods" (2007). Abstract—Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO 2 gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold(More)
Perfect metamaterial absorber (PMA) can intercept electromagnetic wave harmful for body in Wi-Fi, cell phones and home appliances that we are daily using and provide stealth function that military fighter, tank and warship can avoid radar detection. We reported new concept of water droplet-based PMA absorbing perfectly electromagnetic wave with water, an(More)