Sanghyeon Kim

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We report the operation of sub-60-nm deeply scaled InGaAs- and InAs-on-insulator (-OI) MOSFETs on Si substrates with MOS interface buffer engineering and Ni-InGaAs metal source/drain (S/D). InAs-OI(More)
In this paper, we study the electron transport properties of thin-body InxGa1-xAs-on-insulator (InxGa1-xAs-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs) using two types of mobility(More)