Sanghyeon Baeg

Learn More
Reliability is a critical issue for memories. Radiation particles that hit the device can cause errors in some cells, which can lead to data corruption. To avoid this problem, memories are protected with per-word error correction codes (ECCs). Typically, single-error correction and double-error detection (SEC-DED) codes are used. As technology scales,(More)
Although content addressable memory (CAM) provides fast search operation; however, CAM has disadvantages like low bit density and high cost per bit. This paper presents a novel memory architecture called hybrid partitioned static random access memory-based ternary content addressable memory (HP SRAM-based TCAM), which emulates TCAM functionality with(More)
This paper introduces the new failure mechanism manifested in DDR3 SDRAMs under 3× nm technology. The failure in normal cells is caused by iterative hammering accesses to a row within a refresh cycle. With the valid yet stressful access to a row, the charge in a DRAM cell leaked faster and the values of the stressed cells could not be retained. The(More)
The soft error rate of memories is increased by high-energy particles as technology shrinks. Single-error correction codes (SEC), scrubbing techniques and interleaving schemes are the most common approaches for protecting memories from soft errors. It is essential to employ analytical models to guide the selection of interleaving distance; relying on rough(More)