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Nitrogen Implantation to Improve Electron Channel Mobility in 4H-SiC MOSFET

• Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Roberta Nipoti
• IEEE Transactions on Electron Devices
• 2008

Normally off 4H-SiC MOSFET devices have been fabricated on a p-type semiconductor and electrically characterized at different temperatures. A gate oxide obtained by nitrogen ion implantation… (More)

Characterization of MOS capacitors fabricated on n-type 4 H-SiC implanted with nitrogen at high dose

• Antonella Poggi, Francesco Moscatelli, +4 authors Roberta Nipoti
• 2007

Aiming to minimize the interface state density, we fabricated MOS capacitors on n-type 4H-SiC by using wet oxidation of nitrogen implanted layers. We investigated a wide range of implantation dose,… (More)

Boron pile-up phenomena during ultra shallow junction formation

• Miche Ferri, Sandro Solmi, +6 authors E. Collart
• 2007 15th International Conference on Advanced…
• 2007

The redistribution during annealing of low-energy B implants in SOI structures and in bulk Si have been investigated by comparing Secondary Ion Mass Spectrometry (SIMS) and simulated profiles.… (More)

Tera scale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires

• G. F. Cerofolini, Mario Ferri, +4 authors Dario Narducci
• 2010

The race of integrated-circuit technology toward high bit density has already brought to transistor densities of the order of 10 cm−2, yet keeping conventional circuit layouts. Crossbar structures… (More)

Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFETs

• Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti
• IEEE Transactions on Electron Devices
• 2008

A gate oxide obtained by wet oxidation of SiC preimplanted with nitrogen has been investigated on MOS capacitors and implemented in a n-channel MOSFET technology. Different implantation fluences and… (More)

Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

• M. Ferria, Sandro Solmi, +4 authors K. Kirkby
• 2007

Redistribution during annealing of low-energy boron B implants in silicon on insulator SOI structures and in bulk Si has been investigated by comparing secondary ion mass spectrometry SIMS and… (More)

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