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This paper describes a method for designing cryogenic silicon-germanium (SiGe) transistor low-noise amplifiers and reports record microwave noise temperature, i.e., 2 K, measured at the module connector interface with a 50-Omega generator. A theory for the relevant noise sources in the transistor is derived from first principles to give the minimum possible(More)
2 Abstract-Design data, in the form of dimension tables, is presented for probe transitions for microstrip substrates with 4 dielectric constants (E, = 2.2, 6.0, 10.1, and 13) in two orientations relative to the waveguide (broadside and longitudinal). These dimensions have been optimized for full waveguide bandwidth with > 20 dB return loss using an(More)
The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The critical parameter, Tdrain, in the Pospieszalski noise model is determined as a function of drain current by measurements of the 1-GHz noise of discrete transistors with 50- Ω generator impedance. The dc I-V for the transistors under test are presented and(More)
Two packaged low noise amplifiers for the 0.3-4 GHz frequency range are described. The amplifiers can be operated at temperatures of 300-4 K and achieve noise temperatures in the 5 K range (<0.1 dB noise figure) at 15 K physical temperature. One amplifier utilizes commercially available, plastic-packaged SiGe transistors for first and second stages; the(More)
The concept of using a long mismatched transmission line to measure noise parameters has been known for some time. However, it has been limited to narrow-bandwidth applications, and a wide-band extension has never been reported. In order to measure the cryogenic noise parameters of a wide-band low-noise amplifier (LNA), a wide-band frequency-variation(More)
This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low power consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor model, modeled and measured on-wafer and in-module results at both 300K and 24K(More)
— A novel transition from coaxial cable to microstrip is presented in which the coax connector is perpendicular to the substrate of the printed circuit. Such a right-angle transition has practical advantages over more common end-launch geometries in some situations. The design is compact, easy to fabricate, and provides repeatable performance of better than(More)