Sander Weinreb

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This paper describes a method for designing cryogenic silicon-germanium (SiGe) transistor low-noise amplifiers and reports record microwave noise temperature, i.e., 2 K, measured at the module connector interface with a 50-Omega generator. A theory for the relevant noise sources in the transistor is derived from first principles to give the minimum possible(More)
| The first 42 elements of the Allen Telescope Array (ATA-42) are beginning to deliver data at the Hat Creek Radio Observatory in northern California. Scientists and engineers are actively exploiting all of the flexibility designed into this innovative instrument for simultaneously conducting surveys of the astrophysical sky and conducting searches for(More)
The Stratospheric TeraHertz Observatory (STO) is a NASA funded, Long Duration Balloon (LDB) experiment designed to address a key problem in modern astrophysics: understanding the Life Cycle of the Interstellar Medium (ISM). STO will survey a section of the Galactic plane in the dominant interstellar cooling line [C II] (1.9 THz) and the important star(More)
Pre-HEAT is a 20 cm aperture submillimeter-wave telescope with a 660 GHz (450 micron) Schottky diode heterodyne receiver and digital FFT spectrometer for the Plateau Observatory (PLATO) developed by the University of New South Wales. In January 2008 it was deployed to Dome A, the summit of the Antarctic plateau, as part of a scientific traverse led by the(More)
In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and linearity of the amplifiers into special consideration. Oscillations that can occur within a multi-finger transistor are studied and verified with simulations and measurements. To overcome the stability(More)
The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The critical parameter, Tdrain, in the Pospieszalski noise model is determined as a function of drain current by measurements of the 1-GHz noise of discrete transistors with 50- Ω generator impedance. The dc I-V for the transistors under test are presented and(More)