Samuel J Bader

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We present measurements of coherence and successive decay dynamics of higher energy levels of a superconducting transmon qubit. By applying consecutive π pulses for each sequential transition frequency, we excite the qubit from the ground state up to its fourth excited level and characterize the decay and coherence of each state. We find the decay to(More)
Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm 2 is obtained with reverse bias voltage up to À20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mX cm 2 is achieved, with a breakdown voltage corresponding to a peak electric field of $3.1 MV/cm in GaN.(More)
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