Salin Junsangsri

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This paper presents a simulation-based analysis of spike and flicker noise in a Phase Change Memory (PCM); this investigation is based on HSPICE simulation by taking into account cell-level (with its neighbors) and array-level considerations. State switching phenomena in binary PCM memories are dealt in detail to assess the impact of these two types of(More)
This paper presents the design of a non-volatile register file using cells made of a SRAM and a Programmable Metallization Cell (PMC). The proposed cell is a symmetric 8T2P (8-transistors, 2PMC) design; it utilizes three control lines to ensure the correctness in its operations (i.e. Write, Read, Store and Restore). Simulation results using HSPICE are(More)
This paper proposes a low-power non-volatile programmable inverter cell (NVPINV) that can be used with a COGRE (i.e. a compactly organized generic reconfigurable element) circuit to store the correct information for programming when establishing the desired logic function. The programmable data in the cell is read from a non-volatile SRAM (NVSRAM); two RMs(More)
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