Salin Junsangsri

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
This paper presents the design of a non-volatile register file using cells made of a SRAM and a Programmable Metallization Cell (PMC). The proposed cell is a symmetric 8T2P (8-transistors, 2PMC) design; it utilizes three control lines to ensure the correctness in its operations (i.e. Write, Read, Store and Restore). Simulation results using HSPICE are(More)
—This paper presents a simulation-based analysis of spike and flicker noise in a Phase Change Memory (PCM); this investigation is based on HSPICE simulation by taking into account cell-level (with its neighbors) and array-level considerations. State switching phenomena in binary PCM memories are dealt in detail to assess the impact of these two types of(More)
This paper proposes a low-power non-volatile programmable inverter cell (NVPINV) that can be used with a COGRE (i.e. a compactly organized generic reconfigurable element) circuit to store the correct information for programming when establishing the desired logic function. The programmable data in the cell is read from a non-volatile SRAM (NVSRAM); two RMs(More)
  • 1