Saleh Masoodian

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Early research progress in the realization of the Quanta Image Sensor is reported. Simulation of binary data acquisition and image formation was performed. Initial analysis and simulation of a readout signal chain has been performed and bounds on power dissipation established. Photodetector device concepts have been explored using TCAD. (Invited 1 ) OCIS(More)
Introduction: The ‘quanta image sensor (QIS)’ is being explored as a possible next-generation solid-state imaging technology to address issues with ‘sub-diffraction-limit (SDL)’ pixel sizes in the ‘CMOS image sensor (CIS)’ [1–3]. In the QIS concept, individual photoelectrons are counted by specialised SDL pixels termed ‘jots’, and the output of each jot is(More)
The Quanta Image Sensor (QIS) was conceived when contemplating shrinking pixel sizes and storage capacities, and the steady increase in digital processing power. In the single-bit QIS, the output of each field is a binary bit plane, where each bit represents the presence or absence of at least one photoelectron in a photodetector. A series of bit planes is(More)
Quanta Image sensors (QIS) are proposed as a paradigm shift in image capture to take advantage of shrinking pixel sizes [1]. The key aspects of the single-bit QIS involve counting individual photoelectrons using tiny, spatially-oversampled binary photodetectors at high readout rates, representing this binary output as a bit cube (x,y,t) and finally(More)
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