Sakib Muhtadi

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We report on an Al<inf>0 85</inf>Ga<inf>0.15</inf>N-Al<inf>0 65</inf>Ga<inf>0 35</inf>N high electron mobility transistor (HEMT) on low-defect AlN buffers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as 1800 &#x03A9; per square. Devices with a source-drain spacing of(More)
We report Al<sub>0.85</sub> Ga<sub>0.15</sub> N/Al<sub>0.65</sub> Ga<sub>0.35</sub>N high-electron mobility transistors on low-defect AlN buffer layers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as <inline-formula> <tex-math notation="LaTeX">$1800~\Omega /\Box $(More)
This paper describes a novel AlInN/InN heterojunction field effect transistor (HFET) without and with an oxide layer for high performance. A charge control model based on the self-consistent solution of one dimensional Schrodinger-Poisson equations is developed. The model takes into account the highly dominant spontaneous and piezoelectric polarization(More)
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