Saiko Kobayashi

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This paper describes an 80 GHz monolithic fundamental frequency oscillator using an AlGaAs heterojunction bipolar transistor technology. The transistor performs a unity current gain frequency f/sub T/=130 GHz and a maximum frequency of oscillation f/sub max/=180 GHz. The output signal level of the oscillator is -9 dBm, and the SSB phase noise is estimated(More)
In this paper, the development of 104 and 134 GHz InGaP/InGaAs heterojunction bipolar transistor oscillators is reported. The 104 GHz oscillator exhibits an output power of -3.4 dBm with a phase noise of -95 dBc/Hz at 1 MHz offset. The 134 GHz oscillator exhibits an output power of -10.4 dBm with a phase noise of -72 dBc/Hz at 1 MHz offset. To our(More)
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