Saibal Mukhopadhyay

Learn More
High leakage current in deep-submicrometer regimes is becoming a significant contributor to power dissipation of CMOS circuits as threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for estimation and reduction of leakage power, especially(More)
In this paper, we have analyzed and modeled failure probabilities (access-time failure, read/write failure, and hold failure) of synchronous random-access memory (SRAM) cells due to process-parameter variations. A method to predict the yield of a memory chip based on the cell-failure probability is proposed. A methodology to statistically design the SRAM(More)
In this paper we have developed analytical models to estimate the mean and the standard deviation in the gate, the subthreshold, the reverse biased source/drain junction band-to-band-tunneling (BTBT) and the total leakage in scaled CMOS devices considering variation in process parameters like device geometry, doping profile, flat-band voltage and supply(More)
Carbon nanotube field-effect transistors (CNFETs) are being extensively studied as possible successors to CMOS. Novel device structures have been fabricated and device simulators have been developed to estimate their performance in a sub-10-nm transistor era. This paper presents a novel method of circuit-compatible modeling of single-walled semiconducting(More)
In this paper, the effect of gate tunneling current in ultra-thin gate oxide MOS devices of effective length (Le ) of 25 nm ( oxide thickness = 1 1 nm), 50 nm ( oxide thickness = 1 5 nm) and 90 nm ( oxide thickness = 2 5 nm) is studied using device simulation. Overall leakage in a stack of transistors is modeled and the opportunities for leakage reduction(More)
The on-chip memory is a dominant source of power and energy consumption in modern and future processors. This paper explores the use of a new emerging non-volatile memory technology as a replacement for SRAM based lower level caches - Spin Torque Transfer(STT) RAM. While STTRAM achieves a reduction in leakage energy of 90% compared to SRAM, the dynamic(More)
This paper presents a programmable and scalable digital neuromorphic architecture based on 3D high-density memory integrated with logic tier for efficient neural computing. The proposed architecture consists of clusters of processing engines, connected by 2D mesh network as a processing tier, which is integrated in 3D with multiple tiers of DRAM. The PE(More)
We have analyzed and modeled the failure probabilities of SRAM cells due to process parameter variations. A method to predict the yield of a memory chip based on the cell failure probability is proposed. The developed method is used in an early stage of a design cycle to minimize memory failure probability by statistically sizing of SRAM cell.
Designing high-performance systems with high yield under parameter variations has raised serious design challenges in nanometer technologies. In this paper, we propose a profit-aware yield model, based on which we present a statistical design methodology to improve profit of a design considering frequency binning and product price profile. A low-complexity(More)