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– Reaction-Diffusion (R-D) framework for interface trap generation along with hole trapping in pre-existing and generated bulk oxide traps are used to model Negative Bias Temperature Instability (NBTI) in differently processed SiON p-MOSFETs. Time, temperature and bias dependent degradation and recovery transients are predicted. Long-time power law exponent(More)
Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory. Many alternative theories have also been proposed to explain(More)
Five signatures of NBTI such as strong gate insulator process dependence, universal rate of long-time DC degradation, AC duty cycle dependence, AC frequency independence as well as recovery of degradation after stress have been identified. A model has been proposed using uncorrelated contributions from stress induced generated interface traps, hole trapping(More)
—Generation and recovery of degradation during and after negative bias temperature instability (NBTI) stress are studied in a wide variety of plasma-nitrided (PN) silicon oxynitride (SiON) p-MOSFETs. An ultrafast on-the-fly linear drain current (I DLIN) technique, which is capable of measuring the shift in threshold voltage from very short (approximately in(More)
Negative bias temperature instability (NBTI) is studied in HfSiON/TiN p-MOSFETs having thin (2 nm) and thick (3 nm) HfSiON layer on top of 1 nm SiO<sub>2</sub> interfacial layer. By using ultra fast on the fly IDLIN technique, the impact of stress temperature (T) and oxide field (E<sub>OX</sub>) on NBTI time evolution is studied. The thickness of the HfSiON(More)
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