Safayet Ahmed

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Carbon-nanotube, field-effect transistors (CNFETs) are among the candidates for emerging radio-frequency applications, and improved linearity has recently been identified as one of the performance advantages they might offer. In this paper, the potential for improved linearity has been investigated by considering an array-based device structure under the(More)
In this paper an 18.2 GHz differential low noise amplifier (LNA) is proposed for use in on chip ultra wide band transceiver. We used TSMC 0.35 mum process MOSFET model parameters and the simulations are carried out using Cadence Spectre simulator. The single stage differential LNA shows 22.06 dB voltage gain at 18.2 GHz with a operating frequency band of(More)
The Capacitance-Voltage (CV) characteristics of n-channel Double Gate (DG) MOS structures are investigated. An accurate and efficient fully coupled 1-D Schrodinger-Poisson self-consistent solver has been used. The numerical solver employs finite element method to calculate different electrostatics of n-channel DGMOS structures. The CV characteristics are(More)
GaN-based double gate DG-MOSFETs have been designed and simulated in nano-scale regime for future logic-switching applications. To minimize the short-channel effects (SCEs), both gate-to-source (G-S) and gate-to-drain (G-D) lengths, symmetrical underlap length, L<sub>UN</sub>, have been extended. The underlap architectured-devices exhibit better performance(More)
A simple and efficient method to calculate the gate leakage current of an ultra-thin body double gate MOS structure on (111) crystallographic orientation, incorporating quantum mechanical effects, is presented. Using an accurate and numerically efficient fully coupled one dimensional Schrodinger-Poisson self-consistent solver, the gate leakage current have(More)
Among the contenders for applications at terahertz frequencies are III-V high-electron-mobility transistors (HEMTs). In this paper, we report on a tendency for III-V devices with low effective-mass channel materials to exhibit a saturation in their unity-current-gain and unity-power-gain cutoff frequencies (<i>f</i><sub>T</sub> and <i>f</i><sub>max</sub>)(More)
Using the Schrodinger-Poisson solver and the transmission line analogy, we have demonstrated an efficient technique for predicting direct tunneling gate leakage current for double gate MOS structures. As FEMLAB was used for solving the two equations, this technique is much faster than the conventional tools. Specifically the model can be used for modeling(More)
Sign Language is the only way of communication for speech impaired people. But general people can't understand the sign language so it becomes difficult for a speech impaired person to communicate with them. In this project an electronic speaking system was developed to ease the communication process of speech impaired people. A glove was developed which(More)
We present the effect of wavefunction penetration on C-V characteristic of ultra-thin body double gate MOSFET using an accurate and numerically extremely efficient fully coupled one dimensional Schrodinger-Poisson self-consistent solver. Penetration effects have been studied and presented for different values of dielectric and silicon body thickness.
The performance of GaN-based Double Gate (DG) MOSFETs have been explored with different gate lengths, L<inf>G</inf> for future high performance switching device applications. Devices have been designed according to the international technology roadmap for semiconductor (ITRS) - 2013. The ON-state currents are found to be 11.38 mA/&#x00B5;m and 9.67(More)
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