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A 50 GSamples/s track and hold amplifier (THA) is designed and fabricated in a 0.25 μm InP HBT technology. High speed switching functionality in the amplifier is achieved using Base-Collector diodes rather than switched-emitter-followers (SEF). Operating with -5 V and -2.5 V supplies, it achieves IIP3 more than +16 dBm up to 22 GHz. An HD3 of -30.3(More)
We present high-efficiency W-band power amplifier (PA) ICs with a new series-connected power combining technique using sub-quarter-wavelength transmission- line baluns. The PAs are implemented in a 0.25&#x03BC;m InP HBT process. At 86GHz, a single-stage PA exhibits 30.4% peak PAE, 20.37dBm P<sub>out</sub> and 23GHz 3dB bandwidth. A two-stage PA exhibits(More)
—We present a new millimeter-wave power-combining technique using transmission-line baluns which both connect transistor outputs in series and inductively tune the transistor output capacitances. The baluns are much shorter than a quarter-wavelength , hence are more compact and have less insertion loss than a balun. We introduce one topology providing an(More)
Injection-locked frequency dividers (ILFDs) are versatile analog circuit blocks used, for example, within phase-locked loops (PLLs). With respect to their digital counterparts, they have the advantages of a low power consumption and division ratios greater than two. The price for these advantages is believed to be a limited locking range. Here we show that(More)
A DC-100 GHz limiting amplifier is designed and fabricated in a 0.25&#x03BC;m InP DHBT technology. The amplifier is designed in two stages using a modified Cherry-Hooper architecture proceeding an emitter-follower at each stage. Consuming 145 mW of power from a -2.5 V supply, it achieves 20.5 dB differential S21 gain with less than 1 dB gain ripple and(More)
We present a two-stage D-band power amplifier with stacked HBTs and sub-quarter-wavelength baluns as an efficient and compact series power combining technique which leads to a small die area of 0.62 mm<sup>2</sup> and a record 254 mW/mm<sup>2</sup> output power per unit die area. The power amplifier has been fabricated in a 90 nm SiGe BiCMOS technology and(More)