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A 50 GSamples/s track and hold amplifier (THA) is designed and fabricated in a 0.25 μm InP HBT technology. High speed switching functionality in the amplifier is achieved using Base-Collector diodes rather than switched-emitter-followers (SEF). Operating with -5 V and -2.5 V supplies, it achieves IIP3 more than +16 dBm up to 22 GHz. An HD3 of -30.3(More)
We are reporting a patient who presente with upper gastrointestinal bleeding which was in part caused by a wandering spleen. Endoscopy revealed erosions of gastric varices in the presence of gastric torsion. At surgical exploration the spleen was present in the pelvis. The twisted and elongated splenic pedicle resulted in a markedly dilated venous system of(More)
We present high-efficiency W-band power amplifier (PA) ICs with a new series-connected power combining technique using sub-quarter-wavelength transmission- line baluns. The PAs are implemented in a 0.25&#x03BC;m InP HBT process. At 86GHz, a single-stage PA exhibits 30.4% peak PAE, 20.37dBm P<sub>out</sub> and 23GHz 3dB bandwidth. A two-stage PA exhibits(More)
—We present a new millimeter-wave power-combining technique using transmission-line baluns which both connect transistor outputs in series and inductively tune the transistor output capacitances. The baluns are much shorter than a quarter-wavelength , hence are more compact and have less insertion loss than a balun. We introduce one topology providing an(More)
Injection-locked frequency dividers (ILFDs) are versatile analog circuit blocks used, for example, within phase-locked loops (PLLs). With respect to their digital counterparts, they have the advantages of a low power consumption and division ratios greater than two. The price for these advantages is believed to be a limited locking range. Here we show that(More)
A DC-100 GHz limiting amplifier is designed and fabricated in a 0.25&#x03BC;m InP DHBT technology. The amplifier is designed in two stages using a modified Cherry-Hooper architecture proceeding an emitter-follower at each stage. Consuming 145 mW of power from a -2.5 V supply, it achieves 20.5 dB differential S21 gain with less than 1 dB gain ripple and(More)
We present a two-stage D-band power amplifier with stacked HBTs and sub-quarter-wavelength baluns as an efficient and compact series power combining technique which leads to a small die area of 0.62 mm<sup>2</sup> and a record 254 mW/mm<sup>2</sup> output power per unit die area. The power amplifier has been fabricated in a 90 nm SiGe BiCMOS technology and(More)