Sadahiro Kato

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This paper reports on our first and series trial to apply the AlGaN heterojunction field effect transistors (HFETs) for in substitution for Si transistors in the induction heating (IH) applications. The on-resistance of the 800 V/50 A AlGaN HFET was 0.11 ohm, and the turn-on and turn-off times were less than 20 ns, respectively, which are lower than that of(More)
tion as an alternative to Si as a semiconductor material for ultra-low-loss power devices. Early development of GaN was carried out in the area of light-emitting devices—green LEDs, lasers, etc.—but its superior performance as noted above and the needs of society led to R&D work for electronic devices being conducted world-wide. Specifically, the AlGaN/GaN(More)
GaN is promising for high-power, high-temperature devices due to some of its large bandgap, high critical electric field, and high saturation velocity compared with Si and SiC. The MOSFET structure can be operated at a positive threshold voltage in the normally-off mode, which is preferable for power transistors in terms of fail-safe operation. In order to(More)
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