Sadahiro Kato

Learn More
This paper reports on our first and series trial to apply the AlGaN heterojunction field effect transistors (HFETs) for in substitution for Si transistors in the induction heating (IH) applications. The on-resistance of the 800 V/50 A AlGaN HFET was 0.11 ohm, and the turn-on and turn-off times were less than 20 ns, respectively, which are lower than that of(More)
— GaN is promising for high-power, high-temperature devices due to some of its large bandgap, high critical electric field, and high saturation velocity compared with Si and SiC. The MOSFET structure can be operated at a positive threshold voltage in the normally-off mode, which is preferable for power transistors in terms of fail-safe operation. In order(More)
  • 1