Sachin S. Sapatnekar

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We present an efficient statistical timing analysis algorithm thatpredicts the probability distribution of the circuit delay while incorporatingthe effects of spatial correlations of intra-die parametervariations, using a method based on principal component analysis.The method uses a PERT-like circuit graph traversal, and hasa run-time that is linear in the(More)
Process variations are of increasing concern in today's technologies, and they can significantly affect circuit performance. An efficient statistical timing analysis algorithm that predicts the probability distribution of the circuit delay considering both inter-die and intra-die variations, while accounting for the effects of spatial correlations of(More)
Negative Bias Temperature Instability (NBTI) has the potential to become one of the main show-stoppers of circuit reliability in nanometer scale devices due to its deleterious effects on transistor threshold voltage. The degradation of PMOS devices due to NBTI leads to reduced temporal performance in digital circuits. We have analyzed the impact of NBTI on(More)
Advances in the chip fabrication technology have begun to make manufacturing 3D chips a reality. For 3D designs to achieve their full potential, it is imperative to develop effective physical design strategies that handle the complexities and new objectives specific to 3D designs. We present two frameworks of placement and routing techniques, for 3D FPGA(More)
In this paper, we present a method for analyzing the leakage current, and hence the leakage power, of a circuit under process parameter variations that can include spatial correlations due to intra-chip variation. A lognormal distribution is used to approximate the leakage current of each gate and the total chip leakage is determined by summing up the(More)
<italic>Careful design and verification of the power distribution network of a chip are of critical importance to ensure its reliable performance. With the increasing number of transistors on a chip, the size of the power network has grown so large as to make the verification task very challenging. The available computational power and memory resources(More)
As the technology node progresses, thermal problems arebecoming more prominent especially in the developingtechnology of three-dimensional (3D) integrated circuits. Thethermal placement method presented in this paper uses an iterativeforce-directed approach in which thermal forces direct cells awayfrom areas of high temperature. Finite element analysis(More)
Negative Bias Temperature Instability (NBTI) in PMOS transistors has become a significant reliability concern in present day digital circuit design. With continued scaling, the effect of NBTI has rapidly grown in prominence, forcing designers to resort to a pessimistic design style using guard-banding. Since NBTI is strongly dependent on the time for which(More)
Negative Bias Temperature Instability (NBTI) in PMOS transistors has become a major reliability concern in nanometer scale design, causing the temporal degradation of the threshold voltage of the PMOS transistors, and the delay of digital circuits. A novel method to characterize the delay of every gate in the standard cell library, as a function of the(More)