Saafie Salleh

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Studies for introduction of atoms into a solid substrate by bombardment of the solid with ions in the electron-volt (eV) to mega-electron-volt (MeV) energy range have always received great interest. Gallium Arsenide (GaAs) is a basic material for most of the III-V based electronics, and, therefore, lends itself for applications where this is of concern. In(More)
This paper reviews typical effects occurring in bipolar junction transistors (BJTs) due to gamma (γ) rays irradiation. The detrimental consequences of this interaction can be categorized into two: the transfer of energy to electrons due to ionization and electronic excitations; and also the transfer of energy to atomic nuclei. The radiation damage induced(More)
Study for penetration of nuclear radiation into semiconductor materials had been of theoretical interest and of practical important in these recent years, driven by the scaling down of semiconductor materials. This paper reviews the typical effects occurring in the operation of MOSFETs due to irradiation with neutrons resulting from Deuterium-Tritium (D-T)(More)
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