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230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
TLDR
The magnetoresistance ratio of 230% at room temperature at spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates. Expand
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Giant tunneling magnetoresistance effect in low-resistance CoFeB∕MgO(001)∕CoFeB magnetic tunnel junctions for read-head applications
The giant tunneling magnetoresistance effect has been achieved in low-resistance CoFeB∕MgO(001)∕CoFeB magnetic tunnel junctions (MTJs) at room temperature. A magnetoresistance (MR) ratio as high asExpand
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Room-temperature ferromagnetism in highly Cr-doped II-VI diluted magnetic semiconductor Zn1-xCrxTe
Highly Cr-doped II–VI diluted magnetic semiconductor (DMS) Zn1−xCrxTe films with a ferromagnetic long-range order have been grown. A phase diagram of Zn1−xCrxTe in relation to the growth temperatureExpand
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CoFeB/MgO/CoFeB magnetic tunnel junctions with high TMR ratio and low junction resistance
A successful attempt in obtaining magnetic tunnel junctions (MTJs) with resistance-area (RA) of 4.7 /spl Omega/m/sup 2/ and magneto-resistance (MR) ratio of about 150% at room temperature isExpand
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Giant tunneling magnetoresistance in MgO-based magnetic tunnel junctions and its industrial applications
First-principle theories predicted an extremely high magnetoresistance (MR) ratio over 1000% in epitaxial Fe(001)/MgO(001)/Fe(001) MTJs. We have fabricated fully epitaxialExpand
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Room-temperature ferromagnetism in a II-VI diluted magnetic semiconductor Zn(1-x)Cr(x)Te.
The magnetic and magneto-optical properties of a Cr-doped II-VI semiconductor ZnTe were investigated. Magnetic circular dichroism measurements showed a strong interaction between the sp carriers andExpand
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Novel Stack Structure of Magnetic Tunnel Junction with MgO Tunnel Barrier Prepared by Oxidation Methods: Preferred Grain Growth Promotion Seed Layers and Bi-layered Pinned Layer
Despite superior compatibility to mass-production, magnetic tunnel junction (MTJ) with MgO barrier prepared by oxidation process (MgOx) has shown unacceptable magnetotransport properties for properExpand
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Ferromagnetism in II-VI diluted magnetic semiconductor Zn1-xCrxTe
Magnetic and transport properties of an epitaxial film of ferromagnetic II–VI diluted magnetic semiconductor (DMS) Zn1−xCrxTe (x=0.035) were investigated. The Curie temperature TC of the film wasExpand
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Huge magnetoresistance and low junction resistance in magnetic tunnel junctions with crystalline MgO barrier
Inserting a 4 /spl Aring/-Mg metal layer between the amorphous CoFeB bottom electrode layer and the MgO barrier layer was found to be effective in realizing huge magnetoresistance effect inExpand
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Magneto-optical studies of ferromagnetism in the II-VI diluted magnetic semiconductor Zn 1 − x Cr x Te
Epitaxial films of ${\mathrm{Zn}}_{1\ensuremath{-}x}{\mathrm{Cr}}_{x}\mathrm{Te}$ were grown on a GaAs substrate. The lattice constant ofExpand
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