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Journals and Conferences
A model of spin-dependent electron tunneling through ferromagnet/insulator/ferromagnet structure is developed. It is based on the Schrodinger equation and free-electron approximation. Variation of… (More)
The gain of a single-electron transistor depending on the position and dimensions of the gate electrode has been studied. Experimental data for an Al/AlO/sub X//Al transistor have been used in… (More)
A physical model of single-electron 2D arrays has been developed. The model offers good agreement with experimental data for a 2D array consisting of 25 metallic islands.
The modified physical model of a metal single-electron transistor (SET) was proposed. On the basis of the model, transverse sizes influence of structure on I-V characteristics was investigated.
Peculiarities of synthesis of surface-active substances (SAS) are studied at periodical cultivation of Rhodococcus erythropolis EK-1 in the AK-210 fermenter on medium containing n-hexadecane. Maximum… (More)
Described in this paper are the results of single-electron 1D and 2D arrays simulation using physical models modified taking into account the influence of cross-section sizes (spatial quantization)… (More)
The models of nanoelectronic devices on single-electron tunneling, resonant tunneling effects and quantum wires are described. These models have been included into a new version of nanoelectronic… (More)