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Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
The resistive switching mechanism of 20- to 57-nm-thick TiO2 thin films grown by atomic-layer deposition was studied by current-voltage measurements and conductive atomic force microscopy. ElectricExpand
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Polar oxides : properties, characterization, and imaging
1 Dielectric Properties of Polar Oxides (U. Bottger).1.1 Introduction.1.2 Dielectric polarization.1.3 Ferroelectric polarization.1.4 Theory of Ferroelectric Phase Transition.1.5 FerroelectricExpand
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Piezoelectric thin films: evaluation of electrical and electromechanical characteristics for MEMS devices
We present a new measurement method to characterize piezoelectric thin films utilizing a four-point bending setup. In combination with a single- or a double-beam laser interferometer, this setupExpand
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Compensation of the Parasitic Capacitance of a Scanning Force Microscope Cantilever Used for Measurements on Ferroelectric Capacitors of Submicron Size by Means of Finite Element Simulations
New measurement techniques enable the electrical characterization of single ferroelectric capacitors with electrode areas below 1 µm2. This is in the range of the cell size of a typical capacitor inExpand
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Inhomogeneous Local Conductivity Induced by Thermal Reduction in BaTiO3 Thin Films and Single Crystals
The potential of perovskite type materials for microelectronic applications depends on a detailed understanding of their electrical properties, especially their intrinsic charge transport mechanisms.Expand
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Piezoresponse in the light of surface adsorbates: Relevance of defined surface conditions for perovskite materials
We report on the influence of a surface layer prevailing on perovskites on the piezoelectricity measured by piezoresponse force microscopy. Surface sensitive measurements show that this layerExpand
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Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope
Direct hysteresis measurements on single submicron structure sizes were performed on epitaxial ferroelectric Pb(Zr,Ti)O3 thin films grown on SrTiO3 with La0.5Sr0.5CoO3 (LSCO) electrodes. The samplesExpand
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Electrical Characterization of Perovskite Nanostructures by SPM
Electrical measurements on perovskite materials were reported as early as 1930 by [1]. Since that time research has changed its focus from bulk ceramic and single crystals to thick and thin films.Expand
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Nanosize ferroelectric oxides – tracking down the superparaelectric limit
Free ferroelectric nanoparticles in the order of 10 nm undergo a size driven phase transition into a paraelectric phase. However, in all applications, especially in ferroelectric random accessExpand
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Dynamic leakage current compensation in ferroelectric thin-film capacitor structures
We report on a measurement procedure to separate ferroelectric switching current and dielectric displacement current from the leakage current in leaky ferroelectric thin-film capacitor structures.Expand
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