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Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties
This paper summarizes some of the essential aspects of silicon-nanowire growth and of their electrical properties. In the first part, a brief description of the different growth techniques is given,Expand
Epitaxial growth of silicon nanowires using an aluminium catalyst
Al-catalysed Si nanowire growth is reported for the first time and it is suggested that growth proceeds via a vapour–solid–solid (VSS) rather than a VLS mechanism, and the tapering of the nanowires can be strongly reduced by lowering the growth temperature. Expand
Measurement of the bending strength of vapor-liquid-solid grown silicon nanowires.
The fracture strength of silicon nanowires grown on a silicon substrate by the vapor-liquid-solid process was measured and indicates that surface or volume defects, if present, play only a minor role in fracture initiation. Expand
Diameter-dependent growth direction of epitaxial silicon nanowires.
It is suggested that the interplay of the liquid-solid interfacial energy with the silicon surface energy expressed in terms of an edge tension is responsible for the change of the growth direction. Expand
Influence of the Si/SiO2 interface on the charge carrier density of Si nanowires
The electrical properties of Si nanowires covered by a SiO2 shell are influenced by the properties of the Si/SiO2 interface. This interface can be characterized by the fixed oxide charge density QfExpand
The shape of epitaxially grown silicon nanowires and the influence of line tension
Silicon nanowires grown epitaxially via the vapor–liquid–solid mechanism show a larger diameter at the base of the nanowire, which cannot be explained by an overgrowth of the nanowire alone. ByExpand
Realization of a silicon nanowire vertical surround-gate field-effect transistor.
A generic process for fabricating a vertical surround-gate field-effect transistor (VS-FET) based on epitaxially grown nanowires is described, and a first electrical characterization proving the feasibility of the process developed and the basic functionality of this device is presented. Expand
Oxidation Rate Effect on the Direction of Metal-Assisted Chemical and Electrochemical Etching of Silicon
Assisted by noble metal particles, non-(100) Si substrates were etched in solutions with different oxidant concentrations at different temperatures. The etching directions of (110) and (111) SiExpand
Finite element method calculations of ZnO nanowires for nanogenerators
The bending of a nonconducting piezoelectric ZnO nanowire is simulated by finite element method calculations. The top part is bent by a lateral force, which could be applied by an atomic forceExpand
Extended arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching.
Large-area high density silicon nanowire (SiNW) arrays were fabricated by metal-assisted chemical etching of silicon, utilizing anodic aluminum oxide (AAO) as a patterning mask of a thin metallicExpand