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Chemical vapor deposition of chalcogenide materials for phase-change memories
Films of chalcogenide Ge-Sb-Te materials were grown by pulsed liquid injection chemical vapor deposition (CVD) technique. Simple thermal CVD without additional process activation and CVD with remoteExpand
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Vapour pressure measurement of low volatility precursors
TLDR
The introduction of new chemicals into semiconductor production processes is an expensive, time consuming exercise. Expand
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Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications
A new simple method combining hot-wire CVD and pulsed liquid injection of metal-organic precursor solutions was developed for production of various chalcogenide films. The grown thin Ge2Sb2Te5 filmsExpand
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Volatility and vapourisation characterisation of new precursors
TLDR
In this paper we present the latest vapour pressure values for the technologically interesting Hf and Ru precursors and corresponding thermogravimetric analysis results. Expand
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Thermal stability studies for advanced Hafnium and Zirconium ALD precursors
Abstract The development of novel precursors for advanced semiconductor applications requires molecular engineering and chemical tailoring to obtain specific physical properties and performanceExpand
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Oxygen incorporation in aluminium-based semiconductors grown by metalorganic vapour phase epitaxy
1H nuclear magnetic resonance (NMR) spectroscopy has been used to characterize and quantify Me2AlOMe impurity added intentionally to Me3Al. This has allowed the correlation of varying alkoxideExpand
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Control of Al‐doping in 4H–SiC homo‐epitaxial layers grown with a HMDS/TMA/P mixture
We report on the growth of thin, aluminium doped, homo-epitaxial layers of 4H-SiC using a threefold mixture of purified hexamethyldisilane (HMDS) admixted with propane (P) and trimethylaluminiumExpand
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Tri‐isopropyl gallium: A very promising precursor for chemical beam epitaxy
The first reported use of tri‐isopropyl gallium (TiPGa) in chemical beam epitaxy (CBE) is described. Hall measurements performed on the resulting undoped GaAs epitaxial layers indicate an order ofExpand
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Comparison of triethylgallium and tri-isobutylgallium for growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy
We have investigated the use of tri‐isobutylgallium (TIBG) as an alternative to the standard source, triethylgallium (TEG), for growth of GaAs and AlGaAs by metalorganic molecular beam epitaxyExpand
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Mechanism for photo-assisted MOVPE nitrogen doping of ZnSe
Abstract Growth kinetics of pyrolytic and photoassisted MOVPE growth of ZnSe using dimethylzinc triethylamine adduct (DMZn.TEN) and ditertiarybutylselenium (DTBSe), diisopropylselenium (DIPSe) orExpand
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