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- Publications
- Influence
The Blue Laser Diode: GaN based Light Emitters and Lasers
- S. Nakamura, Gerhard Fasol
- Materials Science
- 21 March 1997
Physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GaN p-Type GaN InGaN Zn and Si co-doped InGaN/AlGaN double-heterostructure blue… Expand
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Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
- S. Nakamura, T. Mukai, M. Senoh
- Materials Science
- 28 March 1994
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn‐doped InGaN… Expand
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
- S. Nakamura, M. Senoh, +5 authors Y. Sugimoto
- Physics
- 1996
InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a… Expand
Thermal Annealing Effects on P-Type Mg-Doped GaN Films
- S. Nakamura, T. Mukai, M. Senoh, N. Iwasa
- Chemistry
- 1 February 1992
Low-resistivity p-type GaN films were obtained by N2-ambient thermal annealing at temperatures above 700°C for the first time. Before thermal annealing, the resistivity of Mg-doped GaN films was… Expand
Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
- S. Chichibu, T. Azuhata, T. Sota, S. Nakamura
- Physics
- 30 December 1996
Emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static… Expand
The blue laser diode-the complete story
- S. Nakamura, S. Pearton, Gerhard Fasol
- Physics
- 28 August 2000
The story of Shuji Nakamura and the blue laser diode is remarkable. It is clear from this book that he enjoys this fact and wishes his readers to become familiar with his success. Nakamura was a… Expand
High-power GaN P-N junction blue-light-emitting diodes
- S. Nakamura, T. Mukai, M. Senoh
- Materials Science
- 1 December 1991
High-power p-n junction blue-light-emitting diodes (LEDs) were fabricated using GaN films grown with GaN buffer layers. The external quantum efficiency was as high as 0.18%. Output power was almost… Expand
GaN Growth Using GaN Buffer Layer
- S. Nakamura
- Physics
- 1 October 1991
High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate. An optically flat and smooth surface was obtained over a two-inch sapphire… Expand
Strain-induced polarization in wurtzite III-nitride semipolar layers
- A. Romanov, T. J. Baker, S. Nakamura, J. Speck
- Physics
- 25 July 2006
This paper presents growth orientation dependence of the piezoelectric polarization of InxGa1−xN and AlyGa1−yN layers lattice matched to GaN. This topic has become relevant with the advent of growing… Expand
Prospects for LED lighting
- S. Pimputkar, J. Speck, S. Denbaars, S. Nakamura
- Engineering
- 1 April 2009
More than one-fifth of US electricity is used to power artificial lighting. Light-emitting diodes based on group III/nitride semiconductors are bringing about a revolution in energy-efficient… Expand