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III-V-on-Silicon Photonic Devices for Optical Communication and Sensing
In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and
Novel Light Source Integration Approaches for Silicon Photonics
Silicon does not emit light efficiently, therefore the integration of other light‐emitting materials is highly demanded for silicon photonic integrated circuits. A number of integration approaches
Micro‐Transfer‐Printed III‐V‐on‐Silicon C‐Band Semiconductor Optical Amplifiers
The micro‐transfer‐printing of prefabricated C‐band semiconductor optical amplifiers (SOAs) on a silicon waveguide circuit is reported. The SOAs are 1.35 mm in length and 40 µm in width. Dense arrays
III-V-on-Si photonic integrated circuits realized using micro-transfer-printing
A promising technology, micro-transfer-printing (μTP), is discussed, which can be realized in a massively parallel manner on a wafer without substantial modifications to the SiPh process flow, leading to a significant cost reduction of the resulting III-V-on-Si PICs.
Silicon-integrated short-wavelength hybrid-cavity VCSEL.
A short-wavelength hybrid-Cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon is demonstrated, creating a cavity with the standing-wave optical field extending over the silicon- and GaAs-based parts of the cavity.
Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit
A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon
Vertical‐Cavity Silicon‐Integrated Laser with In‐Plane Waveguide Emission at 850 nm
A continuous‐wave electrically‐pumped short‐wavelength hybrid vertical‐cavity silicon‐integrated laser (VCSIL) with in‐plane emission into a silicon nitride (SiN) waveguide is experimentally
Integration of high-speed GaAs metal-semiconductor-metal photodetectors by means of transfer printing for 850 nm wavelength photonic interposers.
We propose and demonstrate the integration of 850 nm GaAs-based metal-semiconductor-metal (MSM) photodetectors (PDs) based on transfer printing for application in photonic interposers. Both devices
1.3 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding.
A single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 μm wavelength heterogeneously integrated on a Si photonics waveguide circuit is reported, attractive candidates to use in uncooled silicon photonic transceivers in data centers.
High-pulse-energy III-V-on-silicon-nitride mode-locked laser
Mode-locked lasers find their use in a large number of applications, for instance, in spectroscopic sensing, distance measurements, and optical communication. To enable widespread use of mode-locked