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Amorphous chalcogenide nano-multilayers: Research and development
Investigations of photophysical processes in amorphous chalcogenide layers were extended during the last two decades towards the nanostructures. Namely the nano-layered films were in the focus of
Inversion of the direction of photo-induced mass transport in As20Se80 films: Experiment and theory
Diffusion mass transfer in thin chalcogenide films under illumination by a focused Gaussian beam have been studied both experimentally and theoretically. It is demonstrated that depending on the
Methods comparing peculiarities of surface‐relief recording in amorphous chalcogenides
Direct surface relief recording in amorphous chalcogenide semiconductors like As20Se80 and other compositions from As(Ge)–S(Se) systems essentially depends on the chemical composition, technology,
Amorphous chalcogenide layers and nanocomposites for direct surface patterning
Homogeneous, 200 – 3000 nm thick layers of chalcogenide glasses, 1 – 2 mm thick plane-parallel plates as well as nanocomposite structures, containing gold nanoparticles have been produced and used
Photoinduced interdiffusion in nanolayered Se∕As2S3 films: Optical and x-ray photoelectron spectroscopic studies
Photoinduced interdiffusion was observed with above band gap light in nanolayered Se/As2S3 films. It is discussed in terms of the optical parameters such as band gap, Urbach edge (E-e) [F. Urbach,
Photoinduced mass-transport based holographic recording of surface relief gratings in amorphous selenium films
Surface relief gratings formation in amorphous selenium thin films in two recording configurations with light intensity modulation were studied in situ by real-time atomic force microscopy and