International Electron Devices Meeting. Technical…
2001
This work is intended to draw attention to the effect of dielectric relaxation which is shown to severely influence the performance of alternative dielectrics in DRAM storage capacitors as well as of… (More)
High dielectric constant materials come into focus as a replacement for the currently used silicon-dioxide or silicon-oxynitride dielectrics in CMOS processes due to further densification of devices.… (More)
International Electron Devices Meeting. Technical…
2001
Essential techniques that allow further scaling of trench DRAMs beyond 100 nm have been developed. Al/sub 2/O/sub 3/ was implemented as a high-k node dielectric in silicon-insulator-silicon trench… (More)
One of the key enablers in scaling DRAM trench capacitors to sub-100 nm ground rules is a viable collar integration concept. We report, for the first time, the successful implementation of a buried… (More)
For the first time, fully integrated 128 Mb trench DRAMs using Al/sub 2/O/sub 3/ as high-k node dielectric in silicon-insulator-silicon (SIS) capacitors were successfully fabricated. A highly… (More)
The lifetime of Al/sub 2/O/sub 3/ dielectrics in trench DRAM capacitors is investigated under bipolar AC stress. Other than generally expected from literature a frequency dependent lifetime reduction… (More)
Looking to reliability of high-k dielectrics, their behavior under electrical stress is very often determined by traps and charges. During the past years a strong focus of the reliability… (More)
In this paper we present a detailed investigation on the influence of carbon co-implantation in the source/drain extension on leakage current and defect density in PFET transistors. Carbon is used to… (More)
I-V curves as a function of voltage and temperature of MOS capacitors with silicon oxide and aluminum oxide after dielectric breakdown are presented. A different temperature behavior in accumulation… (More)