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A comparative study of dielectric relaxation losses in alternative dielectrics

• H. Reisinger, G. Steinlesberger, +6 authors D Schumann
• International Electron Devices Meeting. Technical…
• 2001

This work is intended to draw attention to the effect of dielectric relaxation which is shown to severely influence the performance of alternative dielectrics in DRAM storage capacitors as well as of… (More)

Influence of Al/sub 2/O/sub 3/ dielectrics on the trap-depth profiles in MOS devices investigated by the charge-pumping method

• S. Jakschik, Astrid Avellan, U. Schroeder, J. W. Bartha
• IEEE Transactions on Electron Devices
• 2004

High dielectric constant materials come into focus as a replacement for the currently used silicon-dioxide or silicon-oxynitride dielectrics in CMOS processes due to further densification of devices.… (More)

Reliability aspects of Hf-based capacitors: Breakdown and trapping effects

• Rainer Duschl, M. Kerber, Astrid Avellan, S. Jakschik, U. Schroeder, S. Kudelka
• Microelectronics Reliability
• 2007

Capacitance enhancement techniques for sub-100 nm trench DRAMs

• Melanie Gutsche, Helmut Seidl, +14 authors D Schumann
• International Electron Devices Meeting. Technical…
• 2001

Essential techniques that allow further scaling of trench DRAMs beyond 100 nm have been developed. Al/sub 2/O/sub 3/ was implemented as a high-k node dielectric in silicon-insulator-silicon trench… (More)

Integration of capacitor for sub-100-nm DRAM trench technology

• J. Lutzen, Ann M Birner, +9 authors D Schumann
• 2002 Symposium on VLSI Technology. Digest of…
• 2002

One of the key enablers in scaling DRAM trench capacitors to sub-100 nm ground rules is a viable collar integration concept. We report, for the first time, the successful implementation of a buried… (More)

A fully integrated Al₂O₃ trench capacitor DRAM for sub-100 nm technology

• Helmut Seidl, Melanie Gutsche, +12 authors Beulah Sell
• Digest. International Electron Devices Meeting,
• 2002

For the first time, fully integrated 128 Mb trench DRAMs using Al/sub 2/O/sub 3/ as high-k node dielectric in silicon-insulator-silicon (SIS) capacitors were successfully fabricated. A highly… (More)

Influence of charge trapping on AC reliability of high-k dielectrics

• M. Kerber, Rainer Duschl, +4 authors S. Kudelka
• 2004 IEEE International Reliability Physics…
• 2004

The lifetime of Al/sub 2/O/sub 3/ dielectrics in trench DRAM capacitors is investigated under bipolar AC stress. Other than generally expected from literature a frequency dependent lifetime reduction… (More)

Influence of Stress-Induced-Leakage-Current on Reliability of HfSiOx with EOT>1.5nm and TiN Gate

• S. Jakschik, Th. Kauerauf, +5 authors S. Kudelka
• 2006 IEEE International Integrated Reliability…
• 2006

Looking to reliability of high-k dielectrics, their behavior under electrical stress is very often determined by traps and charges. During the past years a strong focus of the reliability… (More)

Carbon junction implant: Effect on leakage currents and defect distribution

• Guntrade Roll, S. Jakschik, Matthias Goldbach, Thomas Mikolajick, Lothar Frey
• 2010 Proceedings of the European Solid State…
• 2010

In this paper we present a detailed investigation on the influence of carbon co-implantation in the source/drain extension on leakage current and defect density in PFET transistors. Carbon is used to… (More)

Post Hard Breakdown Conduction in MOS Capacitors With Silicon and Aluminum Oxide as Dielectric

• Astrid Avellan, S. Jakschik, Birgit Tippelt, S. Kudelka, Wolfgang H. Krautschneider
• IEEE Electron Device Letters
• 2008

I-V curves as a function of voltage and temperature of MOS capacitors with silicon oxide and aluminum oxide after dielectric breakdown are presented. A different temperature behavior in accumulation… (More)

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