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International Electron Devices Meeting. Technical…
This work is intended to draw attention to the effect of dielectric relaxation which is shown to severely influence the performance of alternative dielectrics in DRAM storage capacitors as well as of… Expand
Abstract Integration of materials with a high dielectric constant into storage or gate capacitor applications requires a detailed understanding of the crystallization behavior. The dependence of… Expand
For the first time, fully integrated 128 Mb trench DRAMs using Al/sub 2/O/sub 3/ as high-k node dielectric in silicon-insulator-silicon (SIS) capacitors were successfully fabricated. A highly… Expand
Mechanical stress in atomic-layer deposition (ALD)-Al 2 O 3 films was investigated at room temperature and during thermal cycling up to 870°C. The films were generally under tensile stress. Thicker… Expand
Proceedings. 51st Electronic Components and…
The paper presents the results of isothermal cyclic shear experiments on flip chip solder joints. Two micro shear testers have been designed and built for this task. One tester is optimised to… Expand
Abstract In this paper, the correlation between the crystallinity of reactively sputtered Nb 2 O 5 layers on Pt bottom electrode and their resistive switching behavior was investigated. It was found… Expand
High dielectric constant materials come into focus as a replacement for the currently used silicon-dioxide or silicon-oxynitride dielectrics in CMOS processes due to further densification of devices.… Expand
The resistive switching characteristics of Pt/TiO"2/Al devices were investigated. Amorphous and rutile TiO"2 samples were prepared and electrically characterized. The amorphous sample was sputtered… Expand
Symposium on VLSI Technology. Digest of Technical…
One of the key enablers in scaling DRAM trench capacitors to sub-100 nm ground rules is a viable collar integration concept. We report, for the first time, the successful implementation of a buried… Expand
International Electron Devices Meeting. Technical…
Essential techniques that allow further scaling of trench DRAMs beyond 100 nm have been developed. Al/sub 2/O/sub 3/ was implemented as a high-k node dielectric in silicon-insulator-silicon trench… Expand