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ZrO2/(Al)GaN metal-oxide-semiconductor structures: characterization and application
We investigate the properties of high-k dielectric insulators on GaN. 22 nm thick ZrO2 is deposited on N- or Ga-polarity GaN. Al/ZrO2/GaN metal–oxide–semiconductor and reference Au/Ni/GaN SchottkyExpand
Compositional and electrical properties of zirconium dioxide thin films chemically deposited on silicon
High-k ZrO2 thin films are grown on p-type silicon by metal–organic chemical vapor deposition based on zirconiumtetrakistrifluoroacetylacetonate as single-source precursor system. Annealing of theExpand
Quantitative scanning capacitance spectroscopy
In this work, a setup for quantitative scanning capacitance spectroscopy is introduced, where an ultrahigh precision, calibrated capacitance bridge is used together with a commercially availableExpand
A capacitance ultrasonic transducer for high-temperature applications
This paper introduces a novel Ultrasonic capacitance transducer for operation at elevated gas temperatures of several hundred degrees Celsius. The transducer design is based on a metallic membraneExpand
Slow trap response of zirconium dioxide thin films on silicon
In this work, we explore the electrical properties of a metal–oxide–semiconductor system that incorporates a high-k zirconia dielectric with an equivalent oxide thickness of 3 nm deposited byExpand
Structural properties of Y2O3 thin films grown on Si(100) and Si(111) substrates
Abstract Y2O3 thin films were deposited by radio frequency (rf) magnetron sputtering on Si substrates. The influence of the deposition parameters – substrate temperatures and post-annealing treatmentExpand
Mapping of local oxide properties by quantitative scanning capacitance spectroscopy
In this work, quantitative scanning capacitance spectroscopy was applied to investigate the local dielectric properties of a chemical vapor deposition grown ZrO2 layer on low-doped silicon. Due toExpand
Evaluation of ZrO/sub 2/ gate dielectrics for advanced CMOS devices
We discuss modeling issues of ZrO/sub 2/ insulating layers fabricated by metal-organic chemical vapor deposition (MOCVD). Tunneling through such layers cannot be described within the establishedExpand
Evaluation of ZrO 2 Gate Dielectrics for Advanced CMOS Devices
We discuss modeling issues of ZrO2 insulating layers fabricated by metal-organic chemical vapor deposition (MOCVD). Tunneling through such layers cannot be described within the established Tsu-EsakiExpand
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