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Two diodes model and illumination effect on the forward and reverse bias I–V and C–V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature
Abstract The forward and reverse bias current–voltage ( I – V ), capacitance/conductance–voltage ( C / G – V ) characteristics of the fabricated Au/PVA (Bi-doped)/n-Si photodiode have beenExpand
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The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method
Abstract Graphene oxide-doped praseodymium barium cobalt oxide (GO-doped PrBaCoO) nanoceramic was used an interfacial layer for the purpose of increasing the capacitance in Au/n-SiExpand
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Frequency- and voltage-dependent dielectric properties and electrical conductivity of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes at room temperature
In this study, frequency and voltage dependence of dielectric constant (ε′), dielectric loss (ε″), loss tangent (tanδ), the real and imaginary parts of electric modulus (M′ and M″) and ac electricalExpand
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The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature
Au/graphene oxide (GO)-doped PrBaCoO nanoceramic/n-Si capacitors were fabricated and their admittance measurements were carried out between 1 kHz and 1 MHz at room temperature. Experimental resultsExpand
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Temperature and Voltage Effect on Barrier Height and Ideality Factor in Au/PVC + TCNQ/p‐Si Structures
The forward bias current conduction mechanisms of Au/PVC + TCNQ/p-Si structures have been investigated in a wide temperature range of 120–420 K for various applied bias voltage. The analysis of theExpand
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Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors
Abstract In this study, praseodymium barium cobalt oxide nanofiber interfacial layer was sandwiched between Au and n-Si. Frequency and voltage dependence of e′, e′, tanδ, electric modulus (M′ and M″)Expand
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Effect of series resistance and interface states on the I–V, C–V and G/ω–V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature
Abstract The forward and reverse bias current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of the Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs)Expand
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Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature
Abstract Au/PVC + TCNQ/p-Si structure was fabricated and real and imaginary parts of the dielectric constant ( ɛ ′,  ɛ ″), loss tangent (tan δ ), and the real and imaginary parts of the electricExpand
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On the anomalous peak and negative capacitance in the capacitance–voltage (C–V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure
The frequency and voltage dependence of the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure were investigated in the wideExpand
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A detailed comparative study on electrical and photovoltaic characteristics of Al/p-Si photodiodes with coumarin-doped PVA interfacial layer: the effect of doping concentration
In this study, three different poly(vinyl alcohol) (PVA) films doped with weight percentages of 0.05, 0.10 and 0.20 coumarin were coated on p-Si wafer via spin-coating method for the purpose ofExpand
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