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Titanium dioxide (TiO2)-based gate insulators
Titanium dioxide has been deposited on silicon for use as a high-permittivity gate insulator in an effort to produce low-leakage films with oxide equivalent thicknesses below 2.0 nm. ExcellentExpand
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An experimental and numerical study of particle nucleation and growth during low-pressure thermal decomposition of silane
This paper discusses an experimental and numerical study of the nucleation and growth of particles during low-pressure (∼1:0 Torr) thermal decomposition of silane (SiH4). A Particle Beam MassExpand
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A study of mixtures of HfO 2 and TiO 2 as high- k gate dielectrics
HfxTi1-xO2 films have been deposited by chemical vapor deposition. Permittivities of approximately 50 have been obtained. The films are stable up to 1000 °C. The interface properties and chargeExpand
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Revealing the Origins of 3D Anisotropic Thermal Conductivities of Black Phosphorus
Black phosphorus (BP) has emerged as a direct bandgap semiconducting material with great application potentials in electronics, photonics, and energy conversion. Experimental characterization of theExpand
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Plasma synthesis of single-crystal silicon nanoparticles for novel electronic device applications
Single-crystal nanoparticles of silicon, several tens of nanometres in diameter, may be suitable as building blocks for single-nanoparticle electronic devices. Previous studies of nanoparticlesExpand
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Does Chemistry Really Matter in the Chemical Vapor Deposition of Titanium Dioxide? Precursor and Kinetic Effects on the Microstructure of Polycrystalline Films
A side-by-side comparison of the TiO2 deposition kinetics and the corresponding microstructures was studied. The two precursors were titanium(IV) isopropoxide and anhydrous titanium(IV) nitrate, andExpand
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Structure optimization for a high efficiency CIGS solar cell
This paper uses numerical simulation to study the effects of Ga concentration profile on the performance of CuIn1−xGaxSe2 (CIGS) solar cell, including the effects of acceptor type Cu antisite defectsExpand
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Internal photoemission of electrons and holes from (100)Si into HfO2
The electron energy band alignment at the Si/HfO2 interfaces with different interlayers (Si3N4, SiON, and SiO2) is directly determined using internal photoemission of electrons and holes from Si intoExpand
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Electrical conduction and band offsets in Si/HfxTi1−xO2/metal structures
The electron energy band alignment in the Si/HfxTi1−xO2/metal (Au,Al) structures is determined as a function of oxide composition using internal photoemission of electrons and photoconductivityExpand
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Heteroepitaxy and the performance of CIGS solar cells
The preferred orientation of CIGS is related to the crystal structure of the bottom MoSe2 layer. The lattice mismatch of chalcopyrite (220) CIGS to hexagonal (102) MoSe2 is lower than otherExpand
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