S . Yu . Turishchev

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Usually porous silicon is obtained by electrochemical etching of c-Si in alcohol solution of HF. However, it is a chemically active substance capable to injure human health and the environment. We elaborated an improved method, where HF is substituted by NH4F. Electron structure of porous layer was investigated by ultrasoft X-ray spectroscopy: USXES(More)
The general matrix theory of the photoelectron/fluorescence excitation in anisotropic multilayer films at the total reflection condition of X-rays has been developed. In a particular case the theory has been applied to explain the oscillation structure of L(2,3) XANES spectra for a SiO(2)/Si/SiO(2)/c-Si sample in the pre-edge region which has been observed(More)
Substructure and phase composition of silicon suboxide films containing silicon nanocrystals and implanted with carbon have been investigated by means of the X-ray absorption near-edge structure technique with the use of synchrotron radiation. It is shown that formation of silicon nanocrystals in the films' depth (more than 60 nm) and their following(More)
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