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To analyze experimental results in group-III nitride lasers, it is necessary to be able to predict their gain spectra accurately. Both excitons and electron hole plasma play important roles in the optical properties of group-III nitride compounds, even under typical lasing conditions of high carrier density and high temperature. Also, inhomogeneous(More)
A series of Ga͑AsSb͒ / GaAs/ ͑AlGa͒As samples with varying GaAs spacer width are studied by electric-field modulated absorption ͑EA͒ and reflectance spectroscopy and modeled using a microscopic theory. The analysis of the Franz–Keldysh oscillations of GaAs capping layer and of the quantum-confined Stark shift of the lowest quantum well ͑QW͒ transitions(More)
This study developed a microscopic laser theory with predictive character which can be used in principle for nonequilibrium calculations. However, due to the high expense in calculation time, it is not applicable for parameter studies or the modelling of laser switch-on. Thus, this work developed a procedure of extracting effective scattering rates from(More)
A microscopic theory is adapted to compute the time-resolved terahertz (THz) probe response of a dynamically evolving, strong-field ionized electron-ion plasma. The numerical solutions show that the relaxation of the initially highly anisotropic carrier distributions leads to a polarization dependent short-time THz response. This THz polarization(More)
(GaIn)(NAs) lasers of different material compositions are considered with respect to their gain properties and radiative and Auger losses. Scattering and dephasing processes are included on a microscopic basis. The theory shows good agreement to experiment. Optical properties for a 1.55 mum structure are investigated and show no principal degradation as(More)
A quantitative analysis of carrier and LO phonon scattering is presented. For quantification of scattering, effective times for carrier-carrier and carrier-phonon scattering are extracted from a microscopic calculation for different structures. A large variance is observed depending on the material parameters, sometimes providing counter-examples to(More)
In this paper, we illustrate the role of modeling in the development of commercial nitride-based lasers and LEDs. Aside from optimizing device performance, joint analysis of simulations and experimental results can shed light into the intrinsic properties of the InGaN/GaN material system.
Radiative losses of laser structures have been investigated using the semiconductor luminescence equations. This microscopic theory allows to predict losses due to spontaneous emission for structures without empirical fit parameters and using as input only the structural design and basic band structure parameters. The strength of radiative losses varies(More)
Fully microscopic models are used to calculate the carrier losses due to spontaneous emission and Auger recombination in semiconductor lasers. It is shown that the theory gives excellent agreement with the experiment using only basic experimental input and standard material parameters. The density dependence as assumed in semi-empirical approaches for(More)
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