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Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect(More)
The origin of the interface formation appearing due to the realization of contacts to ultrathin gold nanowire devices is revealed. Such interfaces play an important role in transport mechanisms in nanowire structures and can determine the electrical and operating parameters of a nanodevice. Based on experimental results, the specific electrical properties(More)
We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and back gate (the substrate) has been revealed and used for optimization of signal-to-noise ratio in subthreshold as well as(More)
The optimization of contacts between graphene and metals is important for many optoelectronic applications. In this work, we evaluate the contact resistance and sheet resistance of monolayer and few-layered graphene with different metallizations using the transfer length method (TLM). Graphene was obtained by the chemical vapor deposition technique(More)
and Introduction: Silicon nanowire field effect transistors (Si NW FETs) are promising structures for the development of new biosensors due to their ability to directly translate interactions with target molecules into readable signals [1]. They are highly sensitive and selective and capable of real-time response and label-free detection. However there are(More)
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