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In this paper, the design, implementation, and experimental results of a 200 W high efficiency broadband GaN HEMT power amplifier (PA) are presented. Power combining was used to combine the outputs of two individual octave bandwidth 100 W power amplifiers. Optimum fundamental and harmonic load impedances were obtained using load-pull simulations for the(More)
Nowadays wireless communication systems demand flexibility along with electrical efficiency. In this work the highly efficient GaN-HEMT technology is combined with electrically tunable Barium-Strontium-Titanate MIM varactors in parallel-plate configuration, resulting in a frequency-agile transistor module. An efficiency improvement of 19% within a tuning(More)
In this work, a novel adaptive broadband power amplifier (PA) design based on barium-strontium-titanate (BST) components for dynamic load modulation (DLM) is presented. The designed PA, driven in class C, makes use of a commercial GaN HEMT, and is intended to operate over 1.8-2.2 GHz with maximum output power of 43 dBm together with high efficiency at(More)
The proper termination of the 2<sup>nd</sup> harmonic impedance is the basic task during the design of a harmonically tuned power amplifier. In addition to several approaches of defining fundamental and harmonic pairs with purely reactive harmonics, the harmonic components can be terminated resistive as well. This work presents a broadband GaN HEMT power(More)
This work addresses tunable matching networks (TMN) for in-package integration of RF-power transistors, fabricated on functional thick film layers of Barium-Strontium-Titanate (BST). The deposition of BST layers is performed in a screen printing process. The TMN is designed to cover the typical GaN-HEMT output impedance range from 7 Ohm to 20 Ohm and(More)
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