S. Thomas Lee

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It is known that Ge condensation is achieved by thermal oxidation of the SiGe layer whereby Si oxidizes faster as compared to Ge, and the Ge atoms are rejected from the oxide into the SiGe layer below. As the Ge diffusion and accumulation varies with gas flow and temperature, detailed investigations are carried out and process conditions are optimized in(More)
Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO <sub>2</sub>/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented
We propose and demonstrate a new technique for evanescent wave chemical sensing by writing long period ~ in a bare multimode plastic clad silica tiber. The sensing length of the present sensor is only IQ mm, but is as sensi1iIt; a conventional unclad evanescent wave sensor having about 100 mm sensing length. The minimum measurabkl1! centratioll of the(More)
Bulk Schottky silicide source/drain n- and p-MOS transistors (SSDTs) with EOT=2.0 /spl sim/ 2.5nm HfO/sub 2/ gate dielectric and HfN/TaN metal gate have been successfully demonstrated using a low temperature process. P-SSDTs with PtSi silicide show excellent electrical performance of I/sub on//I/sub off//spl sim/ 10/sup 7/ - 10/sup 8/ and subthreshold slop(More)
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