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As the gate insulator thickness approaches the channel thickness, the gate capacitance is speculated to be smaller than its gate insulator capacitance. The gate capacitance of the thin-gate IGFET is calculated using Maxwell-Boltzmann and Fermi-Dirac statistics and is experimentally measured. The results show that the gate capacitance approaches the gate(More)
We compared WSix/WN and Ti/WN diffusion barriers for tungsten dual polymetal gate (W-DPG) application, in terms of device performance and gate oxide reliability. WSix/WN diffusion barrier shows degradation of gate oxide, which is found to be due to the B-N dielectric formation and subsequent breakdown of diffusion barrier. Relatively, Ti/WN diffusion(More)
We designed and fabricated the multilayered P(VDF-TrFE-CTFE) actuators, which can be operated by the applied voltage of only 40 V. To fabricate P(VDF-TrFE-CTFE) films having a thickness of about 1∼2 µm, we also developed a new film transfer method, with which the P(VDF-TrFE-CTFE) films of about 1.5 µm thickness were fabricated and(More)
The effects of water and glycerol on the molecular mobility of a soy-protein isolate (SPI)-based film were investigated using 1H nuclear magnetic resonance (NMR). SPI-films were prepared with different glycerol contents and equilibrated to various levels of water activity (aw). The distributed transverse relaxation of film samples showed 2 distinct(More)
The paper covers the comparison of standards on EMC and the programmable (PLC) EMC test results received jointly by Korean - Russian team in Korea Testing Laboratory. The results provide evidence that Korean PLC can meet Russian national standards requirements on EMC for the purpose of their possible implementation at Russian nuclear power plants.
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