S. Susumu Terada

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While the SOI (silicon-on-insulator) device concept is very old, commercialization of the technology is relatively new and growing rapidly in high-speed processor and low-power applications. Furthermore, features such as latch-up immunity, radiation hardness and high-temperature operation are very attractive in high energy and space applications. Once(More)
We are developing n-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the superLHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full(More)
A silicon-on-insulator (SOI) process for pixelated radiation detectors is developed. It is based on a 0.2 mm CMOS fully depleted (FD-)SOI technology. The SOI wafer is composed of a thick, high-resistivity substrate for the sensing part and a thin Si layer for CMOS circuits. Two types of pixel detectors, one integration-type and the other counting-type, are(More)
This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The(More)
This paper describes the silicon microstrip modules in the barrel section of the SemiConductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The module requirements, components and assembly techniques are given, as well as first results of the module performance on the fully-assembled barrels that make up the detector being(More)
We are developing n-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection(More)
We developed a novel flexible optoelectronic (O/E) transceiver module designed for high-bandwidth and low loss data transmission for board level interconnects. In the O/E module, integrated circuits (ICs) and two 12 channel O/E devices including 850 nm vertical-cavity surface-emitting laser diodes (VCSELs) and photodiodes (PDs) were flip-chip assembled on(More)
In this paper we present R&D of n-in-p pixel sensors, aiming for a very high radiation environment up to a fluence of 10 neq/cm . To fabricate these sensors, two batches with different mask sets were employed: the first resulted in pixel sensors compatible with the ATLAS pixel readout frontend chip called FE-I3, and the second in FE-I3 and a new frontend(More)
The ABCD3TA is a 128-channel ASIC with binary architecture for the readout of silicon strip particle detectors in the Semiconductor Tracker of the ATLAS experiment at the Large Hadron Collider (LHC). The chip comprises fast front-end and amplitude discriminator circuits using bipolar devices, a binary pipeline for first level trigger latency, a second level(More)
Silicon-on-insulator (SOI) technology is being investigated for monolithic pixel device fabrication. The SOI wafers by UNIBOND allow the silicon resistivity to be optimized separately for the electronics and detector parts. We have fabricated pixel detectors using fully depleted SOI (FD-SOI) technology provided by OKI Semiconductor Co. Ltd. The first pixel(More)