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This brief investigates the influence of source and drain junction depth on the short-channel effect (SCE) in highly scaled MOSFETs. The established scale length model represents SCE in terms of an exponential function of gate insulator thickness and gate depletion-layer width, but this model fails to account for any influence of source and drain junction(More)
A number of aromatic hydrocarbons participate as effectively as the olefins in atmospheric photooxidation reactions in the presence of nitrogen oxides and ultraviolet light. Judged both on the basis of reactivity and concentrations in the atmosphere, the aromatic hydrocarbons cannot be ignored as contributors to the photochemical type of air pollution.
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