S. S. Murzin

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We investigate the magnetoresistance of epitaxially grown, heavily doped ntype GaAs layers with thickness (40-50 nm) larger than the electronic mean free path (23 nm). The temperature dependence of the dissipative resistance Rxx in the quantum Hall effect regime can be well described by a hopping law (Rxx ∝ exp {−(T0/T ) }) with p ≈ 0.6. We discuss this(More)
Oscillatory variations of the diagonal (Gxx) and Hall (G(xy)) magnetoconductances are discussed in view of topological scaling effects giving rise to the quantum Hall effect. They occur in a field range without oscillations of the density of states due to Landau quantization, and are, therefore, totally different from the Shubnikov-de Haas oscillations.(More)
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